Apparatuses And Methods For Avoiding Electrical Breakdown From RF Terminal To Adjacent Non-RF Terminal

ABSTRACT

An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.

CLAIM OF PRIORITY

This application claims the benefit of and priority, under 35 U.S.C.§119 (e), to U.S. Provisional Patent Application No. 62/265,605, filedon Dec. 10, 2015, and titled “Isolation from RF Mixed Signal”, which ishereby incorporated by reference in its entirety.

FIELD

The present embodiments relate to systems and methods for using a slipring for transferring radio frequency (RF) power and non-RF power viamultiple adjacent channels and for achieving alternating current (AC) ordirect current (DC) isolation from RF mixed signals.

BACKGROUND

Generally, process reactors are used to process operations upon wafers,e.g., silicon wafers. These wafers are typically processed numeroustimes in various reactors in order to form integrated circuits thereon.Some of these process operations involve, for instance, depositingmaterials over select surfaces or layers of a wafer. One such reactor isa plasma enhanced chemical vapor deposition (PECVD) reactor.

For example, a PECVD reactor may be used to deposit insulation filmssuch as silicon oxide (SiO), silicon nitride (SiN), silicon carbide(SiC), silicon oxide carbide (SiOC), and others. Conductor films mayalso be deposited using PECVD reactors. Such material films, to name afew examples, may include tungsten silicide (WSi), titanium nitride(TiN), aluminum (Al) alloy, etc. Depending on the type of film beingdeposited, specific reaction gases are brought into the PECVD reactorwhile radio frequency (RF) power is supplied to produce plasma thatenables the deposition.

During the deposition process, power systems and circuitry are used topower various portions of the reactor, and set and/or monitor settingsand operational parameters. One example parameter is temperature, e.g.,which is controlled by heaters embedded in a substrate support of areactor. By providing the power and monitoring the settings andoperational parameters, the wafer is processed. However, processing ofthe wafer is performed using a different type of power than that used topower some of the portions of the reactor and than that used to monitorthe setting and operational parameters. The different types of powerinterfere with each other and may also cause damage to some of theportions of the reactor. One solution is to provide a separation, e.g.,a clearance distance, a creepage distance, etc., between various signallines that transfer the different types of power to prevent electricarcing caused by the different types of power. However, there may be abreakdown depending on levels of voltage potential in the signal linesand materials of insulators of the signal lines. Moreover, when spacewithin a reactor is limited, the solution may not be applicable.

It is in this context that embodiments described in the presentdisclosure arise.

SUMMARY

Embodiments of the disclosure provide systems and methods for using aslip ring for transferring both radio frequency (RF) power and non-RFpower, e.g., direct current (DC) power, alternating current (AC) power,etc., via multiple adjacent channels and for achieving AC or DCisolation from RF mixed signals. It should be appreciated that thepresent embodiments can be implemented in numerous ways, e.g., aprocess, an apparatus, a system, a device, or a method on acomputer-readable medium. Several embodiments are described below.

Different type of powers, e.g., RF power, AC power, or DC power, etc.,share limited space inside a plasma chamber. For example, RF power issupplied to an electrode of the plasma chamber simultaneous with supplyof AC power to a heater within the chamber and with reception of DCpower generated by a thermocouple. If a voltage difference betweenadjacent signal lines that carry the different types of power issignificant, there is a pre-determined amount of clearance and creepagedistance maintained between the adjacent signal lines for supplying theAC or DC power and the RF power to prevent electrical breakage voltage,e.g., arcing, etc., between the signal lines. However, usually, spacewithin the plasma chamber is limited. In such a case, it is not allowedto have enough physical distance or gap between the adjacent signallines.

In various embodiments, an isolation system is provided within theplasma chamber. The isolation system includes adjacent channels of aslip ring. Each channel transfers both RF and non-RF power, e.g., ACpower, DC power, etc. The transfer of both RF and non-RF power via eachchannel reduces chances of electric arcing between any two adjacentchannels. The slip ring used is an off-the-shelf slip ring or a customdesigned slip ring.

In some embodiments, an isolation system is provided within the plasmachamber to block the AC or DC power so that the electrode of the plasmachamber is protected from being damaged by the AC or DC power and an RFpower supply is protected from being damaged by the AC or DC power. Withuse of capacitors to block the AC or DC power, distance between theadjacent lines is kept to a minimum to conform to the limited spaceavailable within the plasma chamber.

In several embodiments, in the isolation system, RF power is combinedwith AC or DC power in each channel of the isolation system. Thecombination of the RF power with the AC or DC power in conjunction withthe blocking of AC or DC power facilitates reduction in space betweentwo adjacent channels to conform to the limited space available with theplasma chamber.

In various embodiments, a method to share an RF signal and a non-RFsignal, e.g., AC or DC signal, etc., in the limited space available withthe plasma chamber is provided. The method includes providing a circuitthat combines AC or DC power with RF power to generate combined power.Once the combined power is generated, AC or DC power is blocked by thecircuit to reduce chances of damage by the AC or DC power to theelectrode or the RF power supply. The combination of the AC or DC powerwith RF power occurs in the limited space.

If the clearance or creepage distance between a high voltage signal lineand a low voltage signal line is not sufficient, there is decent chanceto have an RF voltage breakdown between the two adjacent signal lines.So, in some embodiments, instead of having a single designated RF signalline among several terminals of the signal lines, all the channels areused to deliver RF power. With the even distribution of RF power amongall the channels, RF voltage drop between two adjacent ones of thechannels is zero or substantially zero volts, and the voltage breakdowndue to RF power is prevented. The even distribution reduces chances ofarcing of RF power between adjacent ones of the channels. At the sametime, each channel is assigned to deliver either DC or AC power.Furthermore, on each channel, a capacitor is placed before a DC powerinput or an AC power input, and another one after a DC power input or anAC power output. In the isolation system, RF power and non-RF power,e.g., AC power, DC power, etc., share the same delivery path, and non-RFpower is isolated by the capacitors of the channels. The isolation bythe capacitors protects the electrode and the RF power supply from beingadversely affected by the AC or DC power.

Also, in various embodiments, power sources that provide AC or DC powerto the heater and controllers that receive voltage signals fromthermocouples that measure temperature of the heater are protected fromRF power by using RF filters at points before and after portions of thechannels that combine RF power with AC or DC power.

In some embodiments, each channel of the isolation system is assigned anamount of AC or DC power. Although there is no or minimal RF potentialdifference between the channels by distributing the RF power equally orsubstantially equally among all the channels, there are voltage dropsfrom the AC or DC power. The highest AC or DC voltage is assigned to achannel CH1 and the lowest AC or DC voltage is assigned to a channel CH8from multiple channels CH1 through CH8 of the isolation system. With theassignment, the isolation system achieves AC or DC voltage drops thatare evenly distributed among the channels CH1 thru CH8. The evendistribution minimizes a risk of arcing or other permanent electricaldamage to components of the plasma chamber.

In some embodiments, an isolation system is described. The isolationsystem includes a top interface plate including a first array ofcapacitors. The first array includes multiple groups of capacitors andeach group of capacitors of the first array is associated with one of aplurality of channels. The isolation system further includes a bottominterface plate including a second array of capacitors. The second arrayincludes multiple groups of capacitors. Each group of capacitors of thesecond array is associated with one of a plurality of channels. The topinterface plate rotates and the bottom interface plate is configured tobe fixed. The isolation system further includes a slip ring connected tothe channels of the top interface plate and the channels of the bottominterface plate. The slip ring transfers both RF power and non-RF powerbetween the top interface plate and the bottom interface plate. Each ofthe first array of capacitors and the second array of capacitors blocksthe non-RF power.

Some advantages of the embodiments described herein include reducing aclearance or creepage distance required to be maintained between twoadjacent signal lines. The clearance or creepage distance is reduced byuse of capacitors that block AC or DC power transferred within thechannels and also by distributing RF power and non-RF power among thechannels. For example, each channel of the isolation system transfers anRF signal and a non-RF signal simultaneously. The blocking of AC or DCpower by the capacitors of the channels in conjunction with thedistribution of RF and non-RF power facilitates reduction of distancebetween two adjacent channels. The reduction of distance facilitatesfitting of the isolation system within a pre-determined amount of spacewithin the plasma chamber.

Further advantages of the embodiments described herein include avoidinga risk of electrical arcing, which is created by a voltage differencebetween an RF signal line and a non-RF signal line, e.g., a terminalthat is used to transfer DC power or AC power, etc., when both thesignal lines are located proximate, e.g., adjacent, etc., to each other.To avoid such arcing, in some embodiments, an off-the-shelf slip ring isused and both RF and non-RF signals are transferred via each channel ofthe slip ring. There is minimal voltage drop between two adjacentchannels of the slip ring and the voltage drop is within confines of amanufacturing specification defining a maximum allowable voltage dropassociated with the slip ring.

Advantages of the embodiments described herein include protecting theelectrode or the RF power supply from damage by AC or DC power. Thecapacitors block AC or DC power to reduce a probability of damage to theelectrode and to the RF power supply.

Additional advantages include using a single slip ring between a topportion and a bottom portion of the isolation system. In conventionalsystems, multiple slip rings of different types are used. For example, adry type slip ring is used to provide one type of power and a wet slipring is used to provide another type of power. Comparatively, in theisolation system, the single slip ring, either of the dry type or of thewet type, is used.

Other aspects will become apparent from the following detaileddescription, taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments may best be understood by reference to the followingdescription taken in conjunction with the accompanying drawings.

FIG. 1 illustrates a substrate processing system, which is used toprocess a wafer, in accordance with some embodiments described in thepresent disclosure.

FIG. 2 illustrates a top view of a multi-station processing tool, wherefour processing stations are provided, in accordance with variousembodiments described in the present disclosure.

FIG. 3 shows a schematic view of a multi-station processing tool with aninbound load lock and an outbound load lock, in accordance with variousembodiments described in the present disclosure.

FIG. 4 is a diagram of a processing system for illustrating use of anisolation system for isolating alternating current (AC) or directcurrent (DC) signals from mixed radio frequency (RF) signals, inaccordance with several embodiments described in the present disclosure.

FIG. 5A is a diagram of a circuit to illustrate blocking of AC powerfrom a mixed RF signal by the circuit, in accordance with someembodiments described in the present disclosure.

FIG. 5B is a diagram of a circuit to illustrate blocking of DC powerfrom a mixed RF signal by the circuit, in accordance with someembodiments described in the present disclosure.

FIG. 5C is a diagram of an embodiment of the circuit of FIG. 5A toillustrate connections between various parts of the circuit.

FIG. 5D is a diagram of an embodiment of the circuit of FIG. 5B toillustrate connections between various parts of the circuit.

FIG. 6 is a diagram of a system for illustrating use of the isolationsystem with multiple heater elements of a pedestal and with multiplethermocouples, in accordance with several embodiments described in thepresent disclosure.

FIG. 7A is a circuit diagram of the isolation system, in accordance withsome embodiments described in the present disclosure.

FIG. 7B is a circuit diagram of another isolation system, in accordancewith some embodiments described in the present disclosure.

FIG. 7C is a circuit diagram of another isolation system, in accordancewith some embodiments described in the present disclosure.

FIG. 8 is a diagram of an embodiment of a plasma chamber including ahousing in which an isolation system is implemented, in accordance withseveral embodiments described in the present disclosure.

FIG. 9A is a block diagram of a system to illustrate a top portion and abottom portion of an isolation system, in accordance with someembodiments described in the present disclosure.

FIG. 9B is a diagram of a housing of a slip ring to illustrate placementof multiple channels within an isolation system, in accordance withvarious embodiments described in the present disclosure.

FIG. 10A is a top view of a top plate of the isolation system or abottom view of a bottom plate of an isolation system, in accordance withvarious embodiments described in the present disclosure.

FIG. 10B is a bottom view of the top plate or a top view of the bottomplate, in accordance with some embodiments described in the presentdisclosure.

DETAILED DESCRIPTION

The following embodiments describe systems and methods for achievingalternating current (AC) or direct current (DC) isolation from radiofrequency (RF) mixed signals. It will be apparent that the presentembodiments may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentembodiments.

Deposition of films is preferably implemented in a plasma enhancedchemical vapor deposition (PECVD) system. The PECVD system may take manydifferent forms. The PECVD system includes one or more plasma chambersor “reactors” (sometimes including multiple stations) that house one ormore wafers and are suitable for wafer processing. Each chamber mayhouse one or more wafers for processing. The one or more chambersmaintain the wafer in a defined position or positions (with or withoutmotion within that position, e.g. rotation, vibration, or otheragitation). A wafer undergoing deposition may be transferred from onestation to another within a reactor chamber during the process. Ofcourse, the film deposition may occur entirely at a single station orany fraction of the film may be deposited at any number of stations.

While in process, each wafer is held in place by a pedestal, e.g., awafer chuck, etc., and/or other wafer holding apparatus. For certainoperations, the apparatus may include a heater such as a heating plateto heat the wafer and a set of thermocouples to measure temperatureduring processing the wafer. Moreover, a motor is provided to rotate thepedestal during the processing of the wafer.

In some embodiments, an isolation circuit is provided. The isolationcircuit includes channels that receive RF power for distribution amongthe channels. The distribution of RF power among the channels reduces adifference in impedance of power between two adjacent channels todecrease chances of arcing between the adjacent channels. For example,in a system in which one path supplies AC or DC power and anothersupplies RF power, there is a chance of arching between the two paths.When all the channels supply RF power as well as AC or DC power, chancesof arcing between two adjacent channels is reduced.

In various embodiments, each of the channels includes filters, e.g., topcapacitors, bottom capacitors, etc., that block AC or DC power. Theblocking of AC or DC power by the top capacitors decreases possibilitiesof damage to an electrode to which RF power is provided via thechannels. Moreover, the blocking of AC or DC power by the bottomcapacitors decreases chances of damage to an RF power supply thatsupplies RF power, which is distributed among the channels.

In several embodiments, the channels of the isolation system are notspaced apart from each other. For example, there is a distance of a fewmillimeters between two adjacent channels. The blocking of AC or DCpower and the distribution of RF power among the channels facilitatesthe reduction in distance. The reduction in distance allows theisolation system to fit within a limited space in the plasma chamber.

FIG. 1 illustrates a substrate processing system 100, e.g., a PECVDsystem, etc., which is used to process a wafer 101. The substrateprocessing system 100 includes a plasma chamber 102 having a lowerchamber portion 102 b and an upper chamber portion 102 a. A centercolumn is configured to support a pedestal 140, which in one embodimentis a powered electrode. The pedestal 140 is electrically coupled to aradio frequency (RF) power supply 104 via a match network 106. The RFpower supply 104 is controlled by a control module 110, e.g., acontroller, etc. Examples of a controller include a processor and amemory device. The processor, for example, is an application specificintegrated circuit (ASIC), a programmable logic device (PLD), a centralprocessing unit (CPU), or a microprocessor, etc. Examples of the memorydevice include a read-only memory (ROM), a random access memory (RAM), aredundant array of storage disks, a hard disk, a Flash memory, etc. Thecontrol module 110 operates the substrate processing system 100 byexecuting a process input and control 108. The process input and control108 includes process recipes, such as power levels, timing parameters,process gasses, mechanical movement of the wafer 101, etc., so as todeposit or form films over the wafer 101.

The center column is also shown to include lift pins 120, which arecontrolled by a lift pin control 122. The lift pins 120 are used toraise the wafer 101 from the pedestal 140 to allow an end-effector topick the wafer 101 and to lower the wafer 101 after being placed by theend end-effector. The substrate processing system 100 further includes agas supply manifold 112 that is connected to process gases 114, e.g.,gas chemistry supplies from a facility, etc. Depending on the processingbeing performed, the control module 110 controls the delivery of theprocess gases 114 via the gas supply manifold 112. The chosen gases arethen flown into a shower head 150 and distributed in a space volume,e.g., a gap, etc., defined between the showerhead 150 face that facesthat wafer 101 and the pedestal 140.

Further, the gases may be premixed or not. Appropriate valving and massflow control mechanisms may be employed to ensure that the correct gasesare delivered during the deposition and plasma treatment phases of theprocess. Process gases exit the plasma chamber 102 via an outlet. Avacuum pump (e.g., a one or two stage mechanical dry pump and/or aturbomolecular pump) draws process gases out and maintains a suitablylow pressure within the reactor by a close loop controlled flowrestriction device, such as a throttle valve or a pendulum valve.

Also shown is a carrier ring 200 that encircles an outer region of thepedestal 140. The carrier ring 200 is sits over a carrier ring supportregion that is a step down from a wafer support region in the center ofthe pedestal 140. The carrier ring includes an outer edge side of itsdisk structure, e.g., outer radius, and a wafer edge side of its diskstructure, e.g., inner radius, that is closest to where the wafer 101sits. The wafer edge side of the carrier ring includes a plurality ofcontact support structures which lift the wafer 101 when the carrierring 200 is lifted by spider forks 180. The carrier ring 200 istherefore lifted along with the wafer 101 and can be rotated to anotherstation, e.g., in a multi-station system.

In an embodiment, an upper electrode within the showerhead 150 isgrounded when RF power is supplied from the RF power supply 104 to alower electrode within the pedestal 140.

In one embodiment, instead of the pedestal 140 being electricallycoupled to the RF power supply 104 via the match network 106, anelectrode within the showerhead 150 is coupled to the RF power supply104 via a match network for receiving power from the RF power supply 104and the lower electrode within the pedestal 140 is grounded.

In some embodiments, the RF power supply 104 includes multiple RFgenerators that generate RF signals having different frequencies, e.g.,an RF generator for generating an RF signal having a frequency RF1 andan RF generator for generating an RF signal having a frequency RF2.

FIG. 2 illustrates a top view of a multi-station processing tool, wherefour processing stations are provided. This top view is of the lowerchamber portion 102 b (e.g., with the top chamber portion 102 a removedfor illustration), where four stations are accessed by spider forks 226.In one embodiment, there is no isolation wall or other mechanism toisolate one station from another. Each spider fork includes a first andsecond arm, each of which is positioned around a portion of each side ofthe pedestal 140. In this view, the spider forks 226 are drawn indash-lines, to convey that they are below the carrier ring 200. Thespider forks 226, using an engagement and rotation mechanism 220 areconfigured to raise up and lift the carrier rings 200 (i.e., from alower surface of the carrier rings 200) from the stationssimultaneously, and then rotate between two or more stations beforelowering the carrier rings 200 (where at least one of the carrier ringssupports a wafer 101) to a next location so that further plasmaprocessing, treatment and/or film deposition can take place onrespective wafers 101.

FIG. 3 shows a schematic view of an embodiment of a multi-stationprocessing tool 300 with an inbound load lock 302 and an outbound loadlock 304. A robot 306, at atmospheric pressure, is configured to movesubstrates, e.g., the wafer 101, etc., from a cassette loaded through apod 308 into inbound load lock 302 via an atmospheric port 310. Inboundload lock 302 is coupled to a vacuum source (not shown) so that, whenatmospheric port 310 is closed, inbound load lock 302 may be pumpeddown. Inbound load lock 302 also includes a chamber transport port 316interfaced with the lower chamber portion 102 b. Thus, when the chambertransport 316 is open, another robot (not shown) may move the substratefrom the inbound load lock 302 to the pedestal 140 of a first processstation for processing.

The depicted lower chamber portion 102 b has four process stations,numbered from 1 to 4 in the embodiment shown in FIG. 3. In someembodiments, the lower chamber portion 102 b maintains a low pressureenvironment so that substrates may be transferred using a carrier ring200 among the process stations without experiencing a vacuum breakand/or air exposure. Each process station depicted in FIG. 3 includes aprocess station substrate holder and process gas delivery line inlets.

FIG. 3 also depicts spider forks 226 for transferring substrates withinthe lower chamber portion 102 b. As will be described in more detailbelow, the spider forks 226 rotate and enable transfer of wafers 101from one station to another. The transfer occurs by enabling the spiderforks 226 to lift carrier rings 200 from an outer undersurface, whichlifts the wafer 101, and rotates the wafer 101 and carrier ring 200together to the next station. In one configuration, the spider forks 226are made from a ceramic material to withstand high levels of heat duringprocessing.

FIG. 4 is a diagram of an embodiment of a processing system 400 forillustrating use of an isolation system 402 for isolating AC or DCsignals from mixed RF signals. The processing system 400 includes aplasma system 404 and additional plasma systems, which are similar tothe plasma system 404. The plasma system 404 further includes the RFpower supply 104, the match network 106, and a power distributor andcombiner, labeled as “Dstbtr & Combiner” in FIG. 4.

The RF power supply 104 includes a 13.56 megahertz (MHz) RF generatorand a 400 kilohertz (kHz) RF generator. The match network 106 includes ahigh radio frequency impedance matching circuit and a low radiofrequency impedance matching circuit. The plasma system 404 includes avoltage or current sensor (V/I sensor), a temperature controller (TC),the lower chamber portion 102 b, the isolation system 402, multiple highfrequency (HF) and low frequency (LF) filters 410, 412, and 414, an ACpower source for heater, an AC power source for motor. Each of thefilters 410, 412, and 414 are further described in a U.S. patentapplication Ser. No. 14/884,401, filed on Oct. 15, 2015, and titled“Mutually Inducted Filters”, which is incorporated by reference hereinin its entirety. The AC power source for heater is labeled as “HeaterPower”, the temperature controller is labeled as “TC”, and the AC powersource for motor is labeled as “Motor control” in FIG. 4.

The pedestal 140 includes a heater element 416 a, e.g., a resistor, aplate, etc., that is used to heat the pedestal 140 to control, e.g.,increase, decrease, etc., temperature of plasma formed in a gap betweenthe showerhead 150 and the pedestal 140. A thermocouple 418 a is inproximity to the heater element 416 a. For example, the thermocouple 418a is placed within a pre-determined distance from the heater element 416to sense a temperature of the heater element 416 a. As another example,the thermocouple 418 a is placed in contact with the heater element 416a to sense the temperature of the heater element 416 a.

The isolation system 402 includes a slip ring that is connected at anend to a top plate, e.g., a printed circuit board, a top interface,etc., of the isolation system 402 and at another end to a bottom plate,e.g., a printed circuit board, a bottom interface, etc., of theisolation system 402. Both the top and bottom plates are furtherdescribed below. A bottom portion of the slip ring is fixed and a topportion of the slip ring is rotatable. The top portion is located closerto the pedestal 140 compared to the bottom portion of the slip ring. Insome embodiments, a liquid metal, e.g., mercury, etc., is bonded tocontacts of the top and bottom portions of the slip ring. The use of theliquid metal between the bottom and top portions of the slip ringprovides electrical connection between the bottom and top portions. Whenthe liquid metal is used, the slip ring is referred to herein as awetted slip ring. In various embodiments, the slip ring includes asliding brush contact instead of the liquid metal contact. Each of thetop and bottom plates of the isolation system has capacitors affixedthereto.

The AC power source for motor supplies an AC signal via the filter 410to the motor. When a stator of the motor is provided with the AC signal,a rotor of the motor rotates to rotate the pedestal 140. The motor isconnected to the pedestal 140 via one or more connection mechanisms,e.g., gears, rods, shafts, links, bellows, ferrofluidic blocks, etc., tothe pedestal 140. The rotation of the pedestal 140 rotates the wafer 101that is placed on the pedestal 140 during processing of the wafer 101,e.g., deposition of materials on the wafer 101, cleaning of the wafer101, etc.

Each RF generator of the RF power supply 104 supplies an RF signal via acorresponding RF cable to a corresponding match circuit of the matchnetwork 106. A high radio frequency match circuit of the match network106 receives an RF signal from the 13.56 MHz RF generator to generate ahigh frequency RF signal and a low radio frequency match circuit of thematch network 106 receives an RF signal from the 400 kHz RF generator togenerate a low frequency RF signal. The power distributor and combinerreceives the high and low frequency RF signals from the high radiofrequency match circuit and the low frequency match circuit to combinethe RF signals to further generate a modified RF signal. The high radiofrequency match circuit and the low frequency match circuit receive theRF signals from the RF power supply 104 and match an impedance of a loadconnected to the match network 106 with that of a source connected tothe match network 106 to generate the modified RF signal by the matchnetwork 106 from the RF signals received from the RF power supply 104.For example, the match network 106 matches a combined impedance of thelower chamber portion 102 b and the isolation system 402 with that ofthe RF power supply 104. The modified RF signal is distributed by thepower distributor and combiner among the plasma system 404 and theadditional plasma systems.

A portion of the modified RF signal is supplied to the isolation system402. Moreover, the isolation system 402 receives an AC signal via thefilter 412 from the AC power source for heater. The AC power source forheater generates an AC signal for providing AC power to the heaterelement 416 a. The isolation system 402 blocks AC power of the AC signalreceived via the filter 412 to reduce chances of the AC power from beingprovided to the RF power supply 104 via the match network 106 and toreduce chances of the AC power from being provided to the lowerelectrode of the pedestal 140. Moreover, the isolation system 402combines the AC signal received via the filter 412 with the portion ofthe modified RF signal to generate a combined signal. The isolationsystem 412 blocks AC power from the combined signal to generate an RFsignal, which is supplied to the lower electrode of the pedestal 140 forprocessing of the wafer 101.

In addition, the isolation system 412 provides a portion of the combinedsignal to the heater element 416 a to control a temperature of theheater element 416 a. The portion of the combined signal passes throughthe heater element 416 a to generate a return signal. The return signalhas AC power and RF power. The return signal is provided from the heaterelement 416 a to the isolation system 402. The return signal is combinedwith a portion of the modified RF signal to generate a supply signal.The isolation system 402 blocks AC power from the supply signal toreduce a probability of the AC power adversely affecting the RF powersupply 104 via the match network 106 and to reduce a probability of theAC power affecting the lower electrode of the pedestal 140. Theisolation system 412 blocks AC power from the supply signal to generatean RF signal, which is supplied to the lower electrode of the pedestal140 for processing of the wafer 101. RF power from the supply signal isfiltered by the filter 412 so that the RF power does not cause damage tothe AC power source for heater.

The thermocouple 418 a senses temperature of the heater element 418 a togenerate sensed temperature signals, e.g., DC signals, etc. A first oneof the sensed temperature signals is provided from a first wire of thethermocouple 418 a to the isolation system 402. The first sensedtemperature signal is combined with a portion of the modified RF signalreceived by the isolation system 402 from the match network 106 togenerate a combination signal. DC power from the combination signal isblocked by the isolation system 402 to reduce possibilities of adverseimpact by the DC power on the RF power supply 104 via the match network104 and to reduce possibilities of adverse impact by the DC power on thelower electrode of the pedestal 140. The isolation system 412 blocks DCpower from the combination signal to provide an RF signal, which issupplied to the lower electrode of the pedestal 140 for processing ofthe wafer 101. Furthermore, RF power from a portion of the combinationsignal passes via the first wire of the thermocouple 418 a and athermocouple junction of the thermocouple 418 a to a second wire of thethermocouple 418 a. The RF power is combined with a second one of thesensed temperature signals at the thermocouple junction to generate anoutput signal. The output signal is provided via the second wire of thethermocouple 418 a to the isolation system 402. The isolation system 402combines the output signal with a portion of the modified signalreceived from the match network 106 to generate a summed signal. Theisolation system 402 blocks DC power from the summed signal to reducechances of adverse effect of the DC power on the RF power supply 104 viathe match network 104 and to reduce chances of adverse effect by the DCpower on the lower electrode of the pedestal 140. The isolation system412 blocks DC power from the summed signal to provide an RF signal,which is supplied to the lower electrode of the pedestal 140 forprocessing of the wafer 101. RF power from the summed signal is filteredby the filter 414 so that the RF power does not adversely affect thetemperature controller.

In some embodiments, the system 400 includes any number of plasmasystems. For example, the system 400 includes the plasma system 404 andincludes two additional plasma systems.

In various embodiments, instead of the 13.56 MHz RF generator, an RFgenerator that has another operational frequency is used. For example,any other MHz RF generator is used instead of the 13.56 MHz RFgenerator. Similarly, in some embodiments, instead of the 400 kHz RFgenerator, an RF generator that has another operational frequency isused. For example, any other kHz RF generator or a MHz RF generator isused instead of the 400 kHz RF generator.

In several embodiments, the RF power supply 104 includes a low radiofrequency RF generator and a high radio frequency RF generator. Anoperational frequency of the high RF generator is greater than anoperational frequency of the low RF generator.

In some embodiments, the RF power supply 104 includes any number of RFgenerators. For example, the RF power supply 104 includes a kHz RFgenerator, a MHz RF generator, and an additional MHz RF generator. Inthis example, the match network 106 includes an additional highfrequency impedance matching circuit that is connected to the additionalMHz RF generator at one end via an RF cable and to the power distributorand combiner at another end. The power distributor and combiner combinesRF signals received from all the three RF generators.

In various embodiments, the plasma system 404 does not include thevoltage or current sensor. For example, the power distributor andcombiner is connected to the isolation system 402 without being coupledto the voltage or current sensor.

In some embodiments, instead of the voltage or current sensor, a currentand voltage sensor is used to sense a complex voltage and current of themodified RF signal provided to the isolation system 402 from the powerdistributor and combiner.

In various embodiments, instead of the AC signal being supplied to aheater element from an AC power supply, a DC signal is supplied to theheater element from a DC power supply, and the above-described methodsapply to the DC signal in the same manner in which the methods areapplies to the AC signal. For example, the DC signal is combined withthe portion of the modified RF signal in the isolation system 402 and RFpower from the DC signal is filtered by the isolation system 402.

In some embodiments, the AC power source operates at a frequency thatranges between 10 hertz (Hz) and 240 Hz. In several embodiments, the ACpower source operates at a frequency that ranges between 20 Hz and 120Hz. In various embodiments, the AC power source operates at a frequencyof 60 Hz. In some embodiments, the AC power source operates at afrequency of 50 Hz. The frequency of operation of the AC power sourcevaries based on frequency specifications of electrical power of acountry, e.g., Europe, USA, etc., in which the AC power source isimplemented. The frequency specifications are published by theInternational Electrotechnical Commission (IEC).

FIG. 5A is a diagram of an embodiment of a circuit 500 a to illustrateblocking of AC power by the circuit 500 a, which is a portion of theisolation system 402 (FIG. 4) that is connected to the AC power sourcefor heater via the filter 412. A signal S1, which is the modified RFsignal received from the match network 106 (FIG. 4), is received at anRF input, e.g., a wire, etc., of the isolation system 402. The signal S1is split into RF signals S2 and S3 at a junction J1 of a channel CH1 andof a channel CH2. In some embodiments, the term channel and channel pathare used interchangeably herein. An AC signal S4, which is output fromthe filter 412, is split into two AC signals S5 and S6 at a junction J2of the channel CH1. The signal S6 passes through a bottom capacitor C1of the channel CH1 and is blocked by the bottom capacitor C1 to reducechances of AC power of the signal S6 from reaching the RF power supply104 via the match network 106 and from damaging components of the RFpower supply 104. The RF signal S2 passes through the bottom capacitorC1 of the channel CH1 and is combined with the signal S5 to provide asignal S7, which has both AC power and RF power.

The combined signal S7 is split into signals S8 and S9 at a junction J3of the channel CH1. Each signal S8 and S9 has AC power and RF power. Atop capacitor C1 of the channel CH1 blocks the AC power from the signalS9 to provide an RF signal S10, which has a minimal amount of AC power,e.g., zero AC power, or negligible AC power, etc. The blocking by thetop capacitor C1 of the channel CH1 reduces chances of AC power of thesignal S9 from damaging the lower electrode of the pedestal 140. The RFsignal S10 is transferred to a junction J4 of the channel CH1. Thejunction J4 is connected to an RF output of the isolation system 402.

The signal S8 passes through the heater element 416 a to change atemperature of the gap between the showerhead 150 and the pedestal 140.The passage of the signal S8 through the heater element 416 a results ina signal S11 being output from the heater element 416 a. The signal S11has both AC power and RF power. The signal S11 is split into two signalsS12 and S13 at a junction J5 of the channel CH2 of the circuit 500 a.Each signal S12 and S13 has both AC power and RF power. A top capacitorC1 of the channel CH2 blocks the AC power from the signal S12 to providean RF signal S14, which has a minimal amount of AC power. The RF signalS14 is combined at the junction J4 with the signal S10 received from thechannel CH1 and with a portion of the signal S3 received via the channelCH2 to generate an RF signal S15, which is provided via an RF output,e.g., an RF cable, etc., to the lower electrode of the pedestal 140. Theblocking of the AC power from the signal S12 protects the lowerelectrode from being damaged by the AC power.

The signal S13 splits into signals S16 and S17 at a junction J6 of thechannel CH2. Each signal S16 and S17 has both RF and AC power. A bottomcapacitor C1 of the channel CH2 blocks the AC power from the signal S16to decrease chances of the AC power from reaching the RF power supply104 via the match network 106 and damaging components of the RF powersupply 104. The filter 412 filters RF power from the signal S17 toprevent damage to components of the AC power source for heater.

In some embodiments in which instead of the AC power source for heater,a DC power source for heater is used, the above circuit 500 a appliesequally to the DC power source for heater such that DC power is blockedby the circuit 500 a instead of AC power. Moreover, DC power is combinedwith RF power by the circuit 500 a instead of combining AC power with RFpower.

FIG. 5B is a diagram of an embodiment of a circuit 500 c to illustrateblocking of DC power by the circuit 500 c, which is a portion of theisolation system 402 (FIG. 4) that is connected to the temperaturecontroller via the filter 414. The signal S1, which is the modified RFsignal received from the match network 106 (FIG. 4), is received at theRF input of the isolation system 402. The signal SM is split into RFsignals S52 and S53 at the junction J1 of a channel CH5 and of a channelCH6. The signal S52 is further split into RF signals S54 and S55 at ajunction J51 of the channel CH5. A DC signal S56, which is a voltagesignal, is generated by the thermocouple 418 a, is split into two DCsignals S57 and S58 at a junction J52 of the channel C5. The signal S57passes through a top capacitor C1 of the channel CH5 and is blocked bythe top capacitor C1 to reduce chances of DC power of the signal S57from reaching the lower electrode of the pedestal 140 via the RF outputand from damaging the lower electrode. The signal S58 passes through thechannel CH5 and combines with the signal S54 to provide a combinedsignal S59, which has both DC power and RF power.

The combined signal S59 is split into signals S60 and S61 at thejunction J51 of the channel CH5. Each signal S60 and S61 has DC powerand RF power. A bottom capacitor C1 of the channel CH5 blocks the DCpower from the signal S60. The blocking by the bottom capacitor C1 ofthe channel CH5 reduces chances of DC power of the signal S60 fromreaching the RF power supply 104 via the match network 106 and fromdamaging the RF power supply 104. The signal S61 combines with thesignal S55 to generate a combined signal S62, which is sent to thefilter 414 from the circuit 500 c. The combined signal S62 has both DCand RF power. The filter 414 filters the RF power from the combinedsignal S62 and provides the DC power of the signal S62 to thetemperature controller.

The signal S59 is split at the junction J52 into signals S63 and S64.Each signal S63 and S64 has RF power. The signal S63 passes via thecapacitor C1 to the RF output. A portion of the signal S53 combines withthe signal S63 at the junction J4 of the channels CH5 and CH6 togenerate a signal S65, which is sent to the lower electrode of thepedestal 140 for processing the wafer 101. Moreover, a portion of thesignal S64 passes via a thermocouple junction of the thermocouple 418 a,a junction J53 of the channel C6 of the circuit 500 c, and a junctionJ54 of the channel CH6 to be filtered by the filter 414 so that theportion does not cause damage to the temperature controller. A DC signalS66 is a voltage signal that is generated when the thermocouple 418 ameasures the temperature of the heater element 416 a (FIG. 5A). Forexample, the DC signal S66 has a polarity opposite to a polarity of theDC signal S56. The DC signal S66 from the thermocouple 418 a is splitinto DC signals S67 and S68 at the junction J53. DC power from thesignal S67 is blocked by a top capacitor C1 of the channel CH6 to reducepossibilities of the DC power from reaching the lower electrode via theRF output and causing damage to the lower electrode.

The DC signal S68 is further split into two DC signals S69 and S70 atthe junction J54 of the channel CH6. DC power from the signal S69 isblocked by a bottom capacitor C1 of the channel CH6 to decrease aprobability of DC power of the signal S69 from reaching the RF powersupply 104 via the match network 106 and damaging components of the RFpower supply 104. DC power from the signal S70 passes via the filter 414to the temperature controller. The temperature controller receives DCpower from the signals S61 and S70 to determine the temperature measuredby the thermocouple 418 a. The temperature controller is connected tothe AC power source for heater to control the AC power source forheater. For example, the temperature controller determines whether thetemperature measured by the thermocouple 418 a is greater than apre-determined threshold. Upon determining that the temperature measuredby the thermocouple 418 a is greater than the pre-determined threshold,the temperature controller sends a command to the AC power source forheater to decrease an amount of power provided to the heater element 416a to further reduce temperature within the gap between the showerhead150 and the pedestal 140. On the other hand, upon determining that thetemperature measured by the thermocouple 418 a is less than thepre-determined threshold, the temperature controller sends a command tothe AC power source for heater to increase an amount of power providedto the heater element 416 a to further increase temperature within thegap. The filter 414 filters RF power from the signals S61 and S70 toprevent the RF power from reaching the temperature controller to furtherprevent damage to components of the temperature controller.

It should be noted that although the above-referenced embodiment ofcircuit 500 c is described with reference to DC signals, the embodimentapplies equally to AC signals. For example, instead of blocking DC powerfrom a signal that includes both DC and RF power, the circuit 500 c isused to block AC signals from a signal that includes both AC and RFpower. Moreover, the circuit 500 c combines RF power with AC powerinstead of combining DC power with RF power.

In some embodiments, the capacitor C1, of the circuit 500 a (FIG. 5A)and/or of the circuit 500 c, has a high impedance at a low frequency,e.g., 60 Hertz, etc., and a low impedance at a high frequency, e.g., 400kilohertz, 13.56 megahertz, etc. For example, the capacitor C1 does notallow passage of AC or DC signals having the low frequency and allowspassage of an RF signal having the high frequency.

In various embodiments, a value of capacitance of each of the bottom andtop capacitors C1, of the circuit 500 a and/or of the circuit 500 c, isthe same. For example, a value of capacitance of the capacitor C1 is inan order of nanofarads or in a range of microfarads and is based onplasma impedance. To further illustrate, a value of a capacitance of thecapacitor C1 is 60 nanofarads for 10 ohm plasma impedance. As anotherillustration, a value of a capacitance of the capacitor C1 rangesbetween 10 nanofarads to 100 microfarads. As another illustration, avalue of a capacitance of the capacitor C1 ranges between 30 nanofaradsto 100 nanofarads.

FIG. 5C is a diagram of an embodiment of the circuit 500 a to illustrateconnections between various parts of the circuit 500 a. The circuit 500a includes a bottom interface, e.g., a bottom plate 902 b, etc., havinga first capacitor C1 of the channel CH1 and a second capacitor C1 of thechannel CH2. The first capacitor C1 has an input In1 and an output Out1.Moreover, the second capacitor C1 has an input In2 and an output Out2.The RF power supply 104 for heater is coupled to the input In1 of thefirst capacitor C1 via the match network 106 and to the input In2 of thesecond capacitor C2 via the match network 106 and the junction J1. TheRF power supply 104 and the match network 106 are collectively labeledas an RF power source 570. Moreover, AC power source for heater, whichis an example of a non-RF power source, is coupled to the output Out1 ofthe first capacitor C1 via the filter 412 and the junction J2 and to theoutput Out2 of the second capacitor C2 via the filter 412 and thejunction J6. The AC power source for heater and the filter 412 arecollectively labeled to be a non-RF power source 572. The circuit 500 aincludes the slip ring that has inputs In3 and In4 and outputs Out3 andOut4. The input In3 of the slip ring is connected to the output Out1 ofthe first capacitor C1 and the input In4 of the slip ring is connectedto the output Out2 of the second capacitor C2. The circuit 500 a has atop interface, e.g., a top plate 902 a, etc., having a third capacitorC1 of the channel CH1 and a fourth capacitor C1 of the channel CH2. Thethird capacitor C1 has an input In5 and an output Out5, and the fourthcapacitor C1 has an input In6 and an output Out6. The input In5 of thethird capacitor C1 is connected to the output Out3 of the slip ring andthe input In6 of the fourth capacitor C1 is connected to the output Out4of the slip ring. Moreover, the input In5 of the third capacitor C1 isconnected to a first heater connection CN1 via the junction J3 and theinput In6 of the fourth capacitor C1 is connected to a second heaterconnection CN2 via the junction J5. The heater connections CN1 and CN2are connected to the heater element 416 a. Moreover, the output Out 5 ofthe third capacitor and the output Out6 of the fourth capacitor areconnected via the junction J4 to the lower electrode of the pedestal140. RF power that is generated by the RF power supply 104 iscommunicated through the first and second capacitors, the slip ring, andthe third and fourth capacitors to the lower electrode. Moreover, non-RFpower, e.g., AC power, etc., that is generated by the AC power sourcefor heater is communicated through the slip ring located between the topinterface and the bottom interface to the heater element 416 a.

In some embodiments in which a DC power source is used for supplying DCpower to the heater element 416 a, the DC power is communicated throughthe slip ring located between the top interface and the bottom interfaceto the heater element 416 a. The DC power is an example of the non-RFpower.

FIG. 5D is a diagram of an embodiment of the circuit 500 c to illustrateconnections between various parts of the circuit 500 c. The circuit 500c includes the bottom interface having a first capacitor C1 of thechannel CH5 and a second capacitor C1 of the channel CH6. The firstcapacitor C1 has an input In21 and an output Out21. Moreover, the secondcapacitor C1 has an input In22 and an output Out22. The RF power supply104 for heater is coupled to the input In21 of the first capacitor C1via the match network 106 and the junction J1 and to the input In22 ofthe second capacitor C2 via the match network 106 and the junction J1.Moreover, the temperature controller is coupled to the output Out21 ofthe first capacitor C1 via the filter 414 and the junction J51 and tothe output Out22 of the second capacitor C2 via the filter 414 and thejunction J54. The circuit 500 b includes the slip ring that has inputsIn23 and In24 and outputs Out23 and Out24. The input In23 of the slipring is connected to the output Out21 of the first capacitor C1 and theinput In24 of the slip ring is connected to the output Out22 of thesecond capacitor C2. The circuit 500 c has the top interface having athird capacitor C1 of the channel CH5 and a fourth capacitor C1 of thechannel CH6. The third capacitor C1 has an input In25 and an outputOut25, and the fourth capacitor C1 has an input In26 and an outputOut26. The input In25 of the third capacitor C1 is connected to theoutput Out23 of the slip ring and the input In26 of the fourth capacitorC1 is connected to the output Out24 of the slip ring. Moreover, theinput In25 of the third capacitor C1 is connected to a firstthermocouple connection CN21, e.g., a first thermocouple wire, etc., viathe junction J52 and the input In26 of the fourth capacitor C1 isconnected to a second thermocouple connection CN22, e.g., a secondthermocouple wire, etc., via the junction J53. The thermocoupleconnections CN21 and CN22 are connected to the thermocouple junction ofthe thermocouple 418 a. Moreover, the output Out25 of the thirdcapacitor and the output Out26 of the fourth capacitor are connected viathe junction J4 to the lower electrode of the pedestal 140. RF powerthat is generated by the RF power supply 104 is communicated through thefirst and second capacitors, the slip ring, and the third and fourthcapacitors to the lower electrode. Moreover, signals generated by thethermocouple 418 a by sensing temperature of the heater 416 a arecommunicated through the slip ring located between the top interface andthe bottom interface to the filter 414.

FIG. 6 is a diagram of an embodiment of a system 600 for illustratinguse of the isolation system 402 with multiple heater elements, e.g., theheater element 416 a, a heater element 416 b, etc., of the pedestal 140and with multiple thermocouples, e.g., the thermocouple 416 a, athermocouple 416 b, etc. The heater elements 416 a and 416 b controltemperature in different zones within the gap between the showerhead 150(FIG. 1) and the pedestal 140 (FIG. 1). The heater element 416 b is thesame as the heater element 416 a. For example, the heater element 416 bis operated to heat a portion of a component, e.g., an electrode, thelower electrode, etc., located within the pedestal 140 to controltemperature of processing the wafer 101 (FIG. 1) and the heater element416 a is operated to heat another portion of the component locatedwithin the pedestal 402. A thermocouple 418 b is in proximity to theheater element 416 b to sense a temperature of the heater element 416 bin the same manner that the thermocouple 418 a is in proximity to theheater element 416 a.

The heater element 416 b is connected to a circuit 500 b of theisolation system 402 in the same manner in which the heater element 416a is connected to the circuit 500 a of the isolation system 402. Thecircuit 500 b is connected to the AC power source for heater via thefilter 412. The circuit 500 b includes channels, CH3 and CH4, shown inFIG. 7A below. The channels CH3 and CH4 of the circuit 500 b are similarin structure and functionality to the channels CH1 and CH2 of thecircuit 500 a. For example, blocking illustrated in FIG. 5A is performedby the circuit 500 b. As another example, the circuit 500 a is anexample of the circuit 500 b when the circuit 500 a is connected to theheater element 416 b instead of the heater element 416 a. Each channelof the circuit 500 b has a top capacitor C1 to block AC power to protectthe lower electrode of the pedestal 140 from being damaged in the samemanner in which the top capacitor C1 of each channel of the circuit 500a protects the lower electrode. Also, each channel of the circuit 500 bhas a bottom capacitor C1 to block AC power and reduces chances of theAC power from reaching the RF power supply 104 (FIG. 1) via the matchnetwork 106 (FIG. 1) to protect the RF power supply 104 from beingdamaged. Each of the circuits 500 a and 500 b is connected to the RFinput via the junction J1 at one end and to the RF output via thejunction J4 at another end.

Moreover, the thermocouple 418 b is connected to a circuit 500 d of theisolation system 402 in the same manner in which the thermocouple 418 ais connected to the circuit 500 c of the isolation system 402. Thecircuit 500 d is connected to the temperature controller via the filter414. The circuit 500 d includes channels, CH7 and CH8, shown in FIG. 7Abelow. The channels CH7 and CH8 of the circuit 500 d are similar instructure and functionality to the channels CH5 and CH6 of the circuit500 c. For example, blocking illustrated in FIG. 5B is performed by thecircuit 500 d. As another example, the circuit 500 c is an example ofthe circuit 500 d when the circuit 500 c is connected to thethermocouple 418 b instead of the thermocouple 418 a. Each channel ofthe circuit 500 c has a top capacitor C1 to block DC power to protectthe lower electrode of the pedestal 140 from being damaged in the samemanner in which the top capacitor C1 of each channel of the circuit 500c protects the lower electrode. Also, each channel of the circuit 500 dhas a bottom capacitor C1 to block DC power and reduces chances of theDC power from reaching the RF power supply 104 (FIG. 1) via the matchnetwork 106 (FIG. 1) to protect the RF power supply 104 from beingdamaged. Each of the circuits 500 c and 500 d is connected to the RFinput via the junction J1 at one end and to the RF output via thejunction J4 at another end.

It should be noted that in some embodiments, the system 600 includes anynumber of heater elements and any number of thermocouples. A number ofcircuits, such as, for example, the circuit 500 a and 500 b, etc., ofthe isolation system 402 increases with the number of heater elements.For example, when three heater elements are used in the system 600,three circuits, same as the circuit 500 a, are used. Similarly, a numberof circuits, such as, for example, the circuit 500 c and 500 d, etc., ofthe isolation system 402 increases with the number of thermocouples. Forexample, when three thermocouples are used in the system 600, threecircuits, each of which is the same as the circuit 500 c, are used.

In various embodiments, the thermocouple 418 b is used forover-temperature detection. For example, when the thermocouple 418 afails, e.g., malfunctions, does not function, etc., the thermocouple 418b measures a temperature of the heater element 416 b and the temperaturecontroller determines whether the temperature exceeds a pre-determinedtemperature. In case the temperature exceeds the pre-determinedtemperature, the temperature controller controls AC power sources thatprovide power to the heater elements 416 a and 416 b to reducetemperature of one or both the heater elements 416 a and 416 b.

FIG. 7A is a diagram of an embodiment of the isolation system 402. Asshown, the isolation system 402 includes the slip ring between a group702 a of top capacitors and a group 702 b of bottom capacitors, each ofthe capacitors being C1. The slip ring connects the group 702 a of topcapacitors with the group 702 b of bottom capacitors. The isolationsystem 402 includes the circuits 500 a, 500 b, 500 c, and 500 d. Thecircuit 500 a is connected to the heater element 416 a and the circuit500 b is connected to the heater element 416 b. Similarly, the circuit500 c is connected to the thermocouple 418 a and the circuit 500 d isconnected to the thermocouple 418 b. Moreover, each of the circuits 500a and 500 b is connected to the AC power source for heater via thefilter 412 and each of the circuits 500 c and 500 d is connected to thetemperature controller via the filter 414.

The bottom capacitors of the isolation system 402 block DC or AC signalsto reduce possibilities of the DC or AC signals from reaching the RFpower supply 104 (FIG. 1) via the match network 106 (FIG. 1). Moreover,the top capacitors of the isolation system 402 block DC or AC signals toreduce possibilities of the DC or AC signals from reaching the lowerelectrode of the pedestal 140 (FIG. 1).

In some embodiments, a gap between two adjacent ones of the channels CH1thru CH8 is in an order of millimeters, e.g., between 5 to 10millimeters, between 4 and 8 millimeters, between 5 and 20 millimeters,etc.

It should be noted that when a dedicated RF channel is assigned fortransferring only an RF signal to the pedestal 140, a voltage potentialon the pedestal 140 is high depending on a process condition. Therefore,there is a risk of voltage breakdown between channels that arededicated. In some embodiments in which dedicated channels are used,e.g., one dedicated channel used to transfer only an RF signal to thepedestal 140, another channel used to transfer only an AC signal, andyet another dedicated channel used to transfer only a DC signal, etc., apotential difference between adjacent dedicated channels is large. Forexample, there is a large potential difference between a dedicated RFchannel and a dedicated AC or DC channel. This increases a risk of avoltage breakdown between the two adjacent dedicated channels.

In various embodiments, assignment to each of the channels CH1 to CH8 isa consideration. Although there is no or minimal RF potential differencebetween channels CH1 to CH8, there is, in some applications, a voltagedrop from an AC or DC signal. Thus, each of the channels CH1 to CH8 areassigned for transferring each signal, e.g., RF signal, AC signal, DCsignal, etc. The assignment of the channels CH1 to CH8 reduces chancesof a small DC or AC voltage drop between adjacent ones of the channelsCH1 to CH8. For example, by assigning a signal having a highest voltageto the channel CH1 and a signal having a lowest voltage to the channelCH8, the isolation system 402 achieves an AC or DC voltage drop that isevenly distributed among the channels CH1 to CH8. The highest voltage ishighest among voltages of all signals assigned to the channels CH1 toCH8 and the lowest voltage is lowest among voltages of all signalsassigned to the channels CH1 to CH8. By assigning the signals, e.g., RFsignal, AC signal, DC signal, etc., to the channels CH1 to CH8 in a rankfrom the highest voltage to the lowest voltage, a risk of arcing orother permanent electrical damage to the pedestal 140 or othercomponents, e.g., the resistor 416 a, the resistor 416 b, thethermocouple 418 a, the thermocouple 418 b, the filter 412, the AC powersource, the filter 414, the temperature controller, the match network106, the RF power supply 104, etc., is minimized.

In various embodiments, amounts of voltages assigned to the channelsfrom CH1 to CH8 are gradually decreasing from the channel CH1 thru CH8.For example, the channels CH1 and CH2 are assigned to a voltage of Avolts, the channels CH3 and CH4 are assigned to a voltage of B volts,the channels CH5 and CH6 are assigned to a voltage of C volts, and thechannels CH7 and CH8 are assigned to a voltage of D volts, where A isgreater than B, which is greater than C, which is greater than D. Tofurther illustrate, the AC power source for heater provides the voltageof A volts to the channels CH1 and CH2 via the filter 412 and providesthe voltage of B volts to the channels CH3 and CH4 via the filter 412.Moreover, a thermocouple connected to the channels CH5 and CH6 generatesthe voltage of C volts and a thermocouple connected to the channels CH7and CH8 generates the voltage of D volts. There are less chances ofarcing from AC or DC power between two adjacent ones of the channels CH1to CH8 when there is a gradual decrease of voltage among the channelsCH1 thru CH8.

FIG. 7B is a diagram of an embodiment of an isolation system toillustrate mono-polar Electro Static Chucking (ESC). As illustrated inFIG. 7B, channel assignment is applicable for the mono-polar ESC. TheESC is a method for clamping the wafer 101 onto the pedestal 140 toimprove film quality during semiconductor process by applying DCpotential to the pedestal 140. There are two types of ESC, one ismono-polar ESC and another is bi-polar ESC. For the mono-polar ESC, ahigh positive DC voltage is allocated to the channel CH1 for providingto the pedestal 140 to attract the self-biased wafer 101, and a heaterconnection, e.g., a connection to the heater 416 a or a connection tothe heater element 416 b, etc., is allocated to the channel CH6. In thismanner, a voltage drop per channel CH1 through CH8 is minimal.

FIG. 7C is a diagram of an embodiment of an isolation system toillustrate the bi-polar ESC. For the bi-polar ESC, the ESC clampingvoltage signals are assigned to the channels CH1 and CH8 to be locatedfar away from each other. In this manner, a breakdown voltage ismaximized on each channel CH1 and CH8. Moreover, for the applicationillustrated using FIG. 7C, DC power is provided to the heater elements416 a and 416 b instead of AC to minimize voltage drop between adjacentones of the channels CH1 to CH8 even further.

FIG. 8 is a diagram of an embodiment of the multi-station chamber 102.The showerheads 150 are lowered to be substantially aligned over thepedestal 140 of each station. The lower chamber portion 102 b issupported by a support structure 802. The support structure 802 is anysuitable structure capable of supporting the multi-station chamber 102,as well as facilities utilized to provide gases, RF power, pressurecontrol, temperature control, timing, and associated controller andelectronics. In some embodiments, the support structure 802 is definedfrom a metal tubular structure, which supports the chamber 102 above asurface (e.g., a clean room floor, etc.) in which the chamber 102 isinstalled. A housing 804 includes the isolation system 402. The housing804 is for each station of the multi-station chamber 102. The housing804 is attached to a bottom of the lower chamber portion 102 b. Theisolation system 402 has a top portion 806 a, which includes the group702 a of top capacitors (FIG. 7A). The isolation system 402 furtherincludes a bottom portion 806 b, which includes the group 702 b ofbottom capacitors (FIG. 7A). The group 702 a of top capacitors and a topportion of the slip ring are connected to the pedestal 140 to rotatewith the pedestal 140. A bottom portion of the slip ring and the group702 b of bottom capacitors are stationary and do not rotate with therotation of the pedestal 140. A vacuum pump (VP), e.g., a one or twostage mechanical dry pump and/or a turbomolecular pump, etc., for eachstation draws process gases out of the station and maintains a suitablylow pressure within the station by a close loop controlled flowrestriction device, such as a throttle valve or a pendulum valve, etc.

FIG. 9A is a block diagram of an embodiment of a system 900 toillustrate the top portion 806 a and the bottom portion 806 b, which areconnected to each other via the slip ring. The top portion 806 aincludes the top plate 902 a and the bottom portion 806 b includes thebottom plate 902 b. The top plate 902 a is an example of the topinterface (FIG. 5C) and the bottom plate 902 b is an example of thebottom interface (FIG. 5C). The top plate 902 a and the bottom plate 902b are connected to each other via the slip ring. The top plate 902 a haslaid thereon and attached thereto a plurality of connectors of thechannels CH1 thru CH8 and of the RF output. The connectors on the topplate 902 a of the channels CH1 and CH2 connect to the heater element416 a and the connectors on the top plate 902 a of the channels CH3 andCH4 connect to the heater element 416 b. Moreover, the connectors on thetop plate 902 a of the channels CH5 and CH6 connect to the thermocouple418 a and the connectors on the top plate 902 a of the channels CH7 andCH8 connect to the thermocouple 418 b. Moreover, a connector located onthe top plate 902 a is the RF output and connects to the lowerelectrode.

Similarly, the bottom plate 902 b has laid underneath and affixedthereto a plurality of connectors of the channels CH1 thru CH8 and ofthe RF input. The connectors under the bottom plate 902 b of thechannels CH1, CH2, CH3 and CH4 connect to the filter 412. Moreover, theconnectors under the bottom plate 902 b of the channels CH5, CH6, CH7and CH4 connected to the filter 414. Moreover, a connector located underthe bottom plate 902 b is the RF input and is connected to the matchnetwork 106. The bottom portion of the slip ring is fixed via an arm 910to a bracket 912, which is attached to the housing 804.

FIG. 9B is a diagram of an embodiment of a housing 920 of the slip ringto illustrate locations of the channels CH1 thru CH8. As shown, the slipring includes a plurality of connectors of the channels CH1 thru CH8.The connectors of the channels CH1 thru CH8 are located on and attachedto a top surface of the housing 920. The connectors attached to the topsurface of the housing 920 are connected to the top plate 902 a (FIG.9A). The connectors on the top surface of the housing 902 are located ina radial order. For example, the connector of the channel CH1 is locatedin a first radial region from a center of the housing 902, the connectorof the channel CH2 is located in a second radial region from the centerof the housing 902, the connector of the channel CH3 is located in athird radial region from the center of the housing 902, the connector ofthe channel CH4 is located in a fourth radial region from the center ofthe housing 902, the connector of the channel CH5 is located in a fifthradial region from the center of the housing 902, the connector of thechannel CH6 is located in a sixth radial region from the center of thehousing 902, the connector of the channel CH7 is located in a seventhradial region from the center of the housing 902, and the connector ofthe channel CH8 is located in an eighth radial region from the center ofthe housing 902. The first radial region has a radius greater than aradius of the second radial region. The second radial region has aradius greater than a radius of the third radial region. The thirdradial region has a radius greater than a radius of the fourth radialregion. The fourth radial region has a radius greater than a radius ofthe fifth radial region. The fifth radial region has a radius greaterthan a radius of the sixth radial region. The sixth radial region has aradius greater than a radius of the seventh radial region. The seventhradial region has a radius greater than a radius of the eighth radialregion.

Connectors of the channels CH1 thru CH8 are located under and attachedto a bottom surface of the housing 920. The connectors attached to thebottom surface of the housing 920 are connected to the bottom plate 902b (FIG. 9A). The connectors under the bottom surface of the housing 902are located in the radial order. For example, the connector of thechannel CH1 is located in the first radial region, the connector of thechannel CH2 is located in the second radial region, the connector of thechannel CH3 is located in the third radial region, the connector of thechannel CH4 is located in the fourth radial region, the connector of thechannel CH5 is located in the fifth radial region, the connector of thechannel CH6 is located in the sixth radial region, the connector of thechannel CH7 is located in the seventh radial region, and the connectorof the channel CH8 is located in the eighth radial region.

In some embodiments, the housing 920 is an off-the-shelf housing andincludes a rotor, which is connected to the bottom plate 902 b (FIG. 9A)to rotate the bottom plate 902 b with respect to the top plate 902 a(FIG. 9A).

FIG. 10A is a top view of the top plate 902 a (FIG. 9A) or a bottom viewof the bottom plate 902 b (FIG. 9A). For example, the top view of thetop plate 902 a is a view looking down in a −z direction, illustratedabove in FIG. 9A. As another example, the bottom view of the bottomplate 902 b is a view looking up in a +z direction, illustrated above inFIG. 9A.

The plate illustrated in FIG. 10A has laid thereon and affixed thereto aplurality of groups of capacitors. For example, the plate has attachedto its surface, a group 1002 a of capacitors of the channel CH1, a group1002 b of capacitors of the channel CH2, a group 1002 c of capacitors ofthe channel CH3, a group 1002 d of capacitors of the channel CH4, agroup 1002 e of capacitors of the channel CH5, a group 1002 f ofcapacitors of the channel CH6, a group 1002 g of capacitors of thechannel CH7, and a group 1002 h of capacitors of the channel CH8. Eachof the groups 1002 a, 1002 b, 1002 c, 1002 d, 1002 e, 1002 f, 1002 g,and 1002 h is connected to the RF output via a connection path 1004,e.g., a strip, a conductor, etc., when the plate illustrated in FIG. 10Ais the top plate 902 a and is connected to the RF input via theconnection path 1004 when the plate illustrated in FIG. 10A is thebottom plate 902 b.

When the plate illustrate in FIG. 10A is the top plate 902 a, aplurality of connectors CTOR1, CTOR2, CTOR3, and CTOR4 attached to thetop surface of the top plate 902 a are connected to the heater elements416 a and 416 b a plurality of connectors CTOR4 and CTOR5 are connectedto the thermocouples 418 a and 418 b. Moreover, when the plateillustrate in FIG. 10A is the bottom plate 902 b, the connectors CTOR1,CTOR2, CTOR3, and CTOR4 attached to the bottom surface of the bottomplate 902 b are connected to the filter 412 (FIG. 9A) for the heaterelements 416 a and 416 b and the connectors CTOR4 and CTOR5 areconnected to the filter 414 (FIG. 9A) for the thermocouples 418 a and418 b.

FIG. 10B is a bottom view of the top plate 902 a (FIG. 9A) or a top viewof the bottom plate 902 b (FIG. 9A). For example, the bottom view of thetop plate 902 a is a view looking up in the +z direction, illustratedabove in FIG. 9A. As another example, the top view of the bottom plate902 b is a view looking down in the +z direction, illustrated above inFIG. 9A.

The plate illustrated in FIG. 10B is the same as that illustrated inFIG. 10A and has laid thereon and affixed thereto a plurality of groupsof capacitors. For example, the plate has attached to its surface, agroup 1010 a of capacitors of the channel CH1, a group 1010 b ofcapacitors of the channel CH2, a group 1010 c of capacitors of thechannel CH3, a group 1010 d of capacitors of the channel CH4, a group1010 e of capacitors of the channel CH5, a group 1010 f of capacitors ofthe channel CH6, a group 1010 g of capacitors of the channel CH7, and agroup 1010 h of capacitors of the channel CH8. The group 1010 a isconnected to the group 1002 a through a via in the plate, the group 1010b is connected to the group 1002 b through a via in the plate, the group1010 c is connected to the group 1002 c through a via in the plate, thegroup 1010 d is connected to the group 1002 d through a via in theplate, the group 1010 e is connected to the group 1002 e through a viain the plate, the group 1010 f is connected to the group 1002 f througha via in the plate, the group 1010 g is connected to the group through avia in the plate, and the group 1010 h is connected to the group 1002 hthrough a via in the plate.

When the plate illustrated in FIG. 10B is the top plate 902 a, the group1010 a is connected to the connector of the channel CH1 of the topportion of the slip ring, the group 1010 b is connected to the connectorof the channel CH2 of the top portion of the slip ring, the group 1010 cis connected to the connector of the channel CH3 of the top portion ofthe slip ring, and the group 1010 d is connected to the connector of thechannel CH4 of the top portion of the slip ring. Moreover, when theplate illustrate in FIG. 10B is the top plate 902 a, the group 1010 e isconnected to the connector of the channel CH5 of the top portion of theslip ring, the group 1010 f is connected to the connector of the channelCH6 of the top portion of the slip ring, the group 1010 g is connectedto the connector of the channel CH7 of the top portion of the slip ring,and the group 1010 h is connected to the connector of the channel CH8 ofthe top portion of the slip ring.

When the plate illustrated in FIG. 10B is the bottom plate 902 b, thegroup 1010 a is connected to the connector of the channel CH1 of thebottom portion of the slip ring, the group 1010 b is connected to theconnector of the channel CH2 of the bottom portion of the slip ring, thegroup 1010 c is connected to the connector of the channel CH3 of thebottom portion of the slip ring, and the group 1010 d is connected tothe connector of the channel CH4 of the bottom portion of the slip ring.Moreover, when the plate illustrate in FIG. 10B is the bottom plate 902b, the group 1010 e is connected to the connector of the channel CH5 ofthe bottom portion of the slip ring, the group 1010 f is connected tothe connector of the channel CH6 of the bottom portion of the slip ring,the group 1010 g is connected to the connector of the channel CH7 of thetop portion of the slip ring, and the group 1010 h is connected to theconnector of the channel CH8 of the bottom portion of the slip ring.

When the plate illustrate in FIGS. 10A and 10B is the top plate 902 a,the capacitors of the groups 1002 a and 1010 a together form the topcapacitor C1 of the channel CH1, the capacitors of the groups 1002 b and1010 b together form the top capacitor C1 of the channel CH2, thecapacitors of the groups 1002 c and 1010 c together form the topcapacitor C1 of the channel CH3, the capacitors of the groups 1002 d and1010 d together form the top capacitor C1 of the channel CH4, and thecapacitors of the groups 1002 e and 1010 e together form the topcapacitor C1 of the channel CH5. Moreover, when the plate illustrate inFIGS. 10A and 10B is the top plate 902 a, the capacitors of the groups1002 f and 1010 f together form the top capacitor C1 of the channel CH6,the capacitors of the groups 1002 g and 1010 g together form the topcapacitor C1 of the channel CH7, and the capacitors of the groups 1002 hand 1010 h together form the top capacitor C1 of the channel CH8.

When the plate illustrate in FIGS. 10A and 10B is the bottom plate 902b, the capacitors of the groups 1002 a and 1010 a together form thebottom capacitor C1 of the channel CH1, the capacitors of the groups1002 b and 1010 b together form the bottom capacitor C1 of the channelCH2, the capacitors of the groups 1002 c and 1010 c together form thebottom capacitor C1 of the channel CH3, the capacitors of the groups1002 d and 1010 d together form the bottom capacitor C1 of the channelCH4, and the capacitors of the groups 1002 e and 1010 e together formthe bottom capacitor C1 of the channel CH5. Moreover, when the plateillustrate in FIGS. 10A and 10B is the bottom plate 902 b, thecapacitors of the groups 1002 f and 1010 f together form the bottomcapacitor C1 of the channel CH6, the capacitors of the groups 1002 g and1010 g together form the bottom capacitor C1 of the channel CH7, and thecapacitors of the groups 1002 h and 1010 h together form the bottomcapacitor C1 of the channel CH8.

Embodiments described herein may be practiced with various computersystem configurations including hand-held hardware units, microprocessorsystems, microprocessor-based or programmable consumer electronics,minicomputers, mainframe computers and the like. The embodiments canalso be practiced in distributed computing environments where tasks areperformed by remote processing hardware units that are linked through anetwork.

In some embodiments, a controller is part of a system, which may be partof the above-described examples. Such systems include semiconductorprocessing equipment, including a processing tool or tools, chamber orchambers, a platform or platforms for processing, and/or specificprocessing components (a wafer pedestal, a gas flow system, etc.). Thesesystems are integrated with electronics for controlling their operationbefore, during, and after processing of a semiconductor wafer orsubstrate. The electronics is referred to as the “controller,” which maycontrol various components or subparts of the system or systems. Thecontroller, depending on the processing requirements and/or the type ofsystem, is programmed to control any of the processes disclosed herein,including the delivery of process gases, temperature settings (e.g.,heating and/or cooling), pressure settings, vacuum settings, powersettings, RF generator settings, RF matching circuit settings, frequencysettings, flow rate settings, fluid delivery settings, positional andoperation settings, wafer transfers into and out of a tool and othertransfer tools and/or load locks connected to or interfaced with asystem.

Broadly speaking, in a variety of embodiments, the controller is definedas electronics having various integrated circuits, logic, memory, and/orsoftware that receive instructions, issue instructions, controloperation, enable cleaning operations, enable endpoint measurements, andthe like. The integrated circuits include chips in the form of firmwarethat store program instructions, digital signal processors (DSPs), chipsdefined as ASICs, PLDs, and/or one or more microprocessors, ormicrocontrollers that execute program instructions (e.g., software). Theprogram instructions are instructions communicated to the controller inthe form of various individual settings (or program files), definingoperational parameters for carrying out a particular process on or for asemiconductor wafer or to a system. The operational parameters are, insome embodiments, a part of a recipe defined by process engineers toaccomplish one or more processing steps during the fabrication of one ormore layers, materials, metals, oxides, silicon, silicon dioxide,surfaces, circuits, and/or dies of a wafer.

The controller, in some embodiments, is a part of or coupled to acomputer that is integrated with, coupled to the system, otherwisenetworked to the system, or a combination thereof. For example, thecontroller is in a “cloud” or all or a part of a fab host computersystem, which allows for remote access of the wafer processing. Thecomputer enables remote access to the system to monitor current progressof fabrication operations, examines a history of past fabricationoperations, examines trends or performance metrics from a plurality offabrication operations, to change parameters of current processing, toset processing steps to follow a current processing, or to start a newprocess.

In some embodiments, a remote computer (e.g. a server) provides processrecipes to a system over a network, which includes a local network orthe Internet. The remote computer includes a user interface that enablesentry or programming of parameters and/or settings, which are thencommunicated to the system from the remote computer. In some examples,the controller receives instructions in the form of data, which specifyparameters for each of the processing steps to be performed during oneor more operations. It should be understood that the parameters arespecific to the type of process to be performed and the type of toolthat the controller is configured to interface with or control. Thus asdescribed above, the controller is distributed, such as by including oneor more discrete controllers that are networked together and workingtowards a common purpose, such as the processes and controls describedherein. An example of a distributed controller for such purposesincludes one or more integrated circuits on a chamber in communicationwith one or more integrated circuits located remotely (such as at theplatform level or as part of a remote computer) that combine to controla process on the chamber.

Without limitation, in various embodiments, example systems include aplasma etch chamber or module, a deposition chamber or module, aspin-rinse chamber or module, a metal plating chamber or module, a cleanchamber or module, a bevel edge etch chamber or module, a physical vapordeposition (PVD) chamber or module, a chemical vapor deposition (CVD)chamber or module, an atomic layer deposition (ALD) chamber or module,an atomic layer etch (ALE) chamber or module, an ion implantationchamber or module, a track chamber or module, and any othersemiconductor processing systems that is associated or used in thefabrication and/or manufacturing of semiconductor wafers.

It is further noted that in some embodiments, the above-describedoperations apply to several types of plasma chambers, e.g., a plasmachamber including an inductively coupled plasma (ICP) reactor, atransformer coupled plasma chamber, a capacitively coupled plasmareactor, conductor tools, dielectric tools, a plasma chamber includingan electron cyclotron resonance (ECR) reactor, etc.

As noted above, depending on the process step or steps to be performedby the tool, the controller communicates with one or more of other toolcircuits or modules, other tool components, cluster tools, other toolinterfaces, adjacent tools, neighboring tools, tools located throughouta factory, a main computer, another controller, or tools used inmaterial transport that bring containers of wafers to and from toollocations and/or load ports in a semiconductor manufacturing factory.

With the above embodiments in mind, it should be understood that some ofthe embodiments employ various computer-implemented operations involvingdata stored in computer systems. These operations are those physicallymanipulating physical quantities. Any of the operations described hereinthat form part of the embodiments are useful machine operations.

Some of the embodiments also relate to a hardware unit or an apparatusfor performing these operations. The apparatus is specially constructedfor a special purpose computer. When defined as a special purposecomputer, the computer performs other processing, program execution orroutines that are not part of the special purpose, while still beingcapable of operating for the special purpose.

In some embodiments, the operations may be processed by a computerselectively activated or configured by one or more computer programsstored in a computer memory, cache, or obtained over the computernetwork. When data is obtained over the computer network, the data maybe processed by other computers on the computer network, e.g., a cloudof computing resources.

One or more embodiments can also be fabricated as computer-readable codeon a non-transitory computer-readable medium. The non-transitorycomputer-readable medium is any data storage hardware unit, e.g., amemory device, etc., that stores data, which is thereafter be read by acomputer system. Examples of the non-transitory computer-readable mediuminclude hard drives, network attached storage (NAS), ROM, RAM, compactdisc-ROMs (CD-ROMs), CD-recordables (CD-Rs), CD-rewritables (CD-RWs),magnetic tapes and other optical and non-optical data storage hardwareunits. In some embodiments, the non-transitory computer-readable mediumincludes a computer-readable tangible medium distributed over anetwork-coupled computer system so that the computer-readable code isstored and executed in a distributed fashion.

Although the method operations above were described in a specific order,it should be understood that in various embodiments, other housekeepingoperations are performed in between operations, or the method operationsare adjusted so that they occur at slightly different times, or aredistributed in a system which allows the occurrence of the methodoperations at various intervals, or are performed in a different orderthan that described above.

It should further be noted that in an embodiment, one or more featuresfrom any embodiment described above are combined with one or morefeatures of any other embodiment without departing from a scopedescribed in various embodiments described in the present disclosure.

Although the foregoing embodiments have been described in some detailfor purposes of clarity of understanding, it will be apparent thatcertain changes and modifications can be practiced within the scope ofappended claims. Accordingly, the present embodiments are to beconsidered as illustrative and not restrictive, and the embodiments arenot to be limited to the details given herein, but may be modifiedwithin the scope and equivalents of the appended claims.

1. A system for providing power to a plasma processing chamber,comprising: a chamber that includes an electrode; a radio frequency (RF)power source for providing RF power to said electrode; a non-RF powersource for providing non-RF power to a first heater for heating theelectrode; a bottom interface having a first capacitor and a secondcapacitor, each of the first and second capacitors having an input andan output, wherein the RF power source is coupled to the inputs of thefirst and second capacitors and the non-RF power source is coupled tothe outputs of the first and second capacitors; a slip ring havingmultiple inputs and multiple outputs, the inputs of the slip ringcoupled to the outputs of the first and second capacitors; a topinterface having a third capacitor and a fourth capacitor, each of thethird and fourth capacitors having an input and an output, wherein theinputs of the third and fourth capacitors are coupled to the outputs ofthe slip ring and to first and second heater connections that lead tothe first heater of the electrode, wherein the outputs of the third andfourth capacitors connect to the electrode; such that said RF power iscommunicated through the first and second capacitors, the slip ring, andthe third and fourth capacitors to the electrode, and said non-RF poweris communicated through the slip ring located between a set thatincludes the first and second capacitors and a set that includes thethird and fourth capacitors.
 2. The system of claim 1, wherein the firstand second capacitors block said non-RF power from communicating backtoward the RF power source, the third and fourth capacitors block thenon-RF power from communicating up toward the electrode.
 3. The systemof claim 1, wherein the non-RF power source is associated with a firstchannel and a second channel of a plurality of channels, wherein thefirst channel includes the first and third capacitors and the secondchannel includes the second and fourth capacitors.
 4. The system ofclaim 3, further comprising, a second heater for heating the electrode,the second heater being associated with a third channel and a fourthchannel of the plurality of channels, wherein the first, second, third,and fourth channels are integrated within a portion of the bottominterface and a portion of the top interface, and wherein the first,second, third, and fourth channels include a portion of the slip ring tocommunicate both the RF power and the non-RF power.
 5. The system ofclaim 1, wherein the slip ring is configured to communicate both said RFpower and said non-RF power simultaneously, the slip ring enablingrotation of the electrode along with the top interface, and the bottominterface is fixed.
 6. The system of claim 1, wherein the bottominterface is defined by a first printed circuit board and the topinterface is defined by a second printed circuit board.
 7. The system ofclaim 1, wherein the RF power is distributed among a plurality ofchannels, the plurality of channels including a first channel and asecond channel, the first channel including the first and thirdcapacitors, and the second channel including the second and fourthcapacitors.
 8. The system of claim 7, wherein each of the channels isassigned a level of voltage and a polarity of voltage to reduce changesof breakdown in electrical voltage between any two adjacent ones of thechannels and to evenly distribute a voltage drop among the channels. 9.A system for providing power to a plasma processing chamber, comprising:a chamber that includes an electrode; a radio frequency (RF) powersource for providing RF power to said electrode; a temperaturecontroller for receiving temperature signals measured by a thermocoupleplaced with reference to a first heater of the electrode; a bottominterface having a first capacitor and a second capacitor, each of thefirst and second capacitors having an input and an output, wherein theRF power source is coupled to the inputs of the first and secondcapacitors and the temperature controller is coupled to the outputs ofthe first and second capacitors; a slip ring having a plurality ofinputs and a plurality of outputs, the inputs of the slip ring coupledto the outputs of the first and second capacitors; a top interfacehaving a third capacitor and a fourth capacitor, each of the third andfourth capacitors having an input and an output, wherein the inputs ofthe third and fourth capacitors are coupled to the outputs of the slipring and to thermocouple connections that lead to a thermocouplejunction of the thermocouple, wherein the outputs of the third andfourth capacitors connect to the electrode; such that said RF powercommunicates through the first and second capacitors, the slip ring, andthe third and fourth capacitors to the electrode, and said temperaturesignals communicate through the slip ring located between a setincluding the first and second capacitors and a set including the thirdand fourth capacitors.
 10. The system of claim 9, wherein the first andsecond capacitors block said non-RF power from communicating back towardthe RF power source, the third and fourth capacitors block the non-RFpower from communicating up toward the electrode.
 11. The system ofclaim 9, wherein the temperature controller is associated with a firstchannel and a second channel of a plurality of channels, wherein thefirst channel includes the first and third capacitors and the secondchannel includes the second and fourth capacitors.
 12. The system ofclaim 11, further comprising, a second thermocouple located withreference to a second heater of the electrode, the second heater beingassociated with a third channel and a fourth channel of the plurality ofchannels, wherein the first, second, third, and fourth channels areintegrated within a portion of the bottom interface and a portion of thetop interface, and wherein the first, second, third, and fourth channelsinclude a portion of the slip ring to communicate both the RF power andthe temperature signals.
 13. The system of claim 9, wherein the slipring is configured to communicate both said RF power and saidtemperature signals simultaneously, the slip ring enabling rotation ofthe electrode along with the top interface, and the bottom interface isfixed.
 14. The system of claim 9, wherein the bottom interface isdefined by a first printed circuit board and the top interface isdefined by a second printed circuit board.
 15. The system of claim 9,wherein the RF power is distributed among a plurality of channels, theplurality of channels including a first channel and a second channel,the first channel including the first and third capacitors, and thesecond channel including the second and fourth capacitors.
 16. Anisolation system comprising: a top interface plate including a firstarray of capacitors, wherein the first array includes multiple groups ofcapacitors, wherein each group of capacitors of the first array isassociated with one of a plurality of channels; a bottom interface plateincluding a second array of capacitors, wherein the second arrayincludes multiple groups of capacitors, wherein each group of capacitorsof the second array is associated with one of a plurality of channels,wherein the top interface plate is configured to rotate and the bottominterface plate is configured to be fixed; a slip ring connected to thechannels of the top interface plate and the channels of the bottominterface plate, wherein the slip ring is configured to transfer bothradio frequency (RF) power and non-RF power between the top interfaceplate and the bottom interface plate, wherein each of the first array ofcapacitors and the second array of capacitors is configured to block thenon-RF power.
 17. The isolation system of claim 16, wherein one of thegroups of capacitors of the first array has an input and an output,wherein the input is connected to a heater element and the output isconnected to an electrode of a plasma chamber.
 18. The isolation systemof claim 16, wherein one of the groups of capacitors of the second arrayhas an input and an output, wherein the input is connected to an RFpower source and the output is connected to a non-RF power source. 19.The isolation system of claim 16, wherein one of the groups ofcapacitors of the first array has an input and an output, wherein theinput is connected to a thermocouple and the output is connected to anelectrode of a plasma chamber.
 20. The isolation system of claim 16,wherein one of the groups of capacitors of the second array has an inputand an output, wherein the input is connected to an RF power source andthe output is connected to an RF filter that is connected to atemperature controller.
 21. The isolation system of claim 16, whereinthe first array of capacitors is configured to block the non-RF power toprotect an electrode from being damaged by the non-RF power, wherein thesecond array of capacitors is configured to block the non-RF power toprotect an RF power source from being damaged by the non-RF power.